External-Cavity Tapered Semiconductor Ring Lasers
نویسنده
چکیده
Laser operation of a tapered semiconductor amplifier in a ring-oscillator configuration is presented. In first experiments, 1.75W time-average optical output power has been achieved at room temperature. Results for different configurations and feedback ratios are shown and compared to the output characteristics of the same device in a masteroscillator power-amplifier configuration. Dynamical analysis of the optical signal reveals passively mode-locked operation. The repetition rate of the generated pulses of 214MHz is determined by the round-trip time of 4.67 ns. Fourier-transformation of the frequency signal to the time-domain yields a pulse-duration of less than 80 ps.
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